NTMFS4C810NAT1G
TRENCH 6 30V NCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMFS4C810NAT1G is an N-Channel Power MOSFET with a drain-source breakdown voltage of 30 V. This device features a low on-resistance of 5.88 mOhm at 30 A and 10 Vgs, enabled by its TRENCH 6 technology. It supports a continuous drain current of 8.2 A at a typical ambient temperature (Ta) and 46 A at a case temperature (Tc). The NTMFS4C810NAT1G is available in a 5-DFN (5x6) 8-SOFL package, suitable for surface mounting. Key parameters include a gate charge of 18.6 nC at 10 V and input capacitance of 987 pF at 15 V. Maximum power dissipation is 750 mW (Ta) or 23.6 W (Tc). This component is utilized in applications such as automotive power management and industrial motor control. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.88mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta), 23.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V |
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