NTMFS4C808NT1G-01
NTMFS4C808NT1G-01Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C808NT1G-01 is an N-channel Power MOSFET designed for high-efficiency power management applications. This device features a Drain-to-Source Voltage (Vdss) of 30 V and supports a continuous drain current (Id) of 9 A at 25°C (Ta) with a maximum power dissipation of 760 mW (Ta). The Rds On is specified at a low 4.8 mOhm at 18 A and 10 V gate drive. Key characteristics include a Gate Charge (Qg) of 8.4 nC at 4.5 V and Input Capacitance (Ciss) of 1670 pF at 15 V. The MOSFET operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2.1 V at 250 µA. This component is presented in a 5-DFN (5x6) 8-SOFL package suitable for surface mounting and is supplied on Tape & Reel. It is utilized in industries such as automotive, industrial power, and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 15 V |
| Qualification | - |
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