NTMFS4C806NT1G
MOSFET N-CH 30V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C806NT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a drain-source breakdown voltage (Vdss) of 30 V and a continuous drain current (Id) of 11 A at ambient temperature and 69 A at case temperature. With a low on-resistance (Rds On) of 3.41 mOhm at 30 A and 10 V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5 V to 10 V. Key parameters include a maximum gate charge (Qg) of 11.6 nC at 4.5 V and a maximum input capacitance (Ciss) of 1683 pF at 15 V. The NTMFS4C806NT1G offers a maximum power dissipation of 770 mW at ambient temperature and 30.5 W at case temperature. It is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) and is supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power control circuits. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.41mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 770mW (Ta), 30.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1683 pF @ 15 V |
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