NTMFS4C805NAT3G
TRENCH 6 30V NCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTMFS4C805NAT3G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30 V drain-source voltage (Vdss) and offers a continuous drain current of up to 78 A (Tc) at 25°C. The low on-resistance of 2.8 mOhm at 30 A and 10 V gate drive ensures minimal conduction losses. With a maximum power dissipation of 33 W (Tc), it is suitable for demanding thermal environments. The 5-DFN (5x6) package, also referred to as 8-PowerTDFN, is designed for surface mounting. Key electrical parameters include a gate charge (Qg) of 30 nC at 10 V and input capacitance (Ciss) of 1972 pF at 15 V. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.9A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 770mW (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
