NTMFS4C805NAT1G
TRENCH 6 30V NCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C805NAT1G is an N-Channel, 30 V MOSFET featuring a 5-DFN (5x6) package. This component offers a continuous drain current of 11.9A at ambient temperature and 78A at case temperature, with a maximum power dissipation of 770mW (Ta) and 33W (Tc). Key electrical characteristics include a low Rds(on) of 2.8mOhm at 30A and 10V, an input capacitance (Ciss) of 1972 pF at 15V, and a gate charge (Qg) of 30 nC at 10V. The device operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.9A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 770mW (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V |
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