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NTMFS4C290NT1G

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NTMFS4C290NT1G

MOSFET N-CH 30V 8.2A/46A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4C290NT1G is an N-Channel MOSFET designed for high-efficiency power switching applications. This device offers a 30V drain-source voltage rating with a continuous drain current capability of 8.2A at 25°C ambient and 46A at 25°C case temperature. It features a low on-resistance of 6.95mOhm maximum at 30A and 10V gate drive. The gate charge is specified at 2.8 nC maximum at 4.5V, and input capacitance (Ciss) is 987 pF maximum at 15V. This MOSFET is packaged in an 8-PowerTDFN, 5-lead (5x6) DFN package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. Power dissipation is rated at 750mW (Ta). The NTMFS4C290NT1G is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs6.95mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds987 pF @ 15 V

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