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NTMFS4C250NT1G

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NTMFS4C250NT1G

MOSFET N-CH 30V 11A/69A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4C250NT1G is a 30 V N-Channel Power MOSFET designed for efficient power management applications. This component features a low on-resistance of 4 mOhm at 30 A and 10 V Vgs, with a continuous drain current capability of 11 A at ambient temperature and 69 A at case temperature. The NTMFS4C250NT1G is housed in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 11.6 nC at 4.5 V and input capacitance (Ciss) of 1683 pF at 15 V. Operating across a temperature range of -55°C to 150°C, this MOSFET is utilized in various industries including automotive and industrial power systems. It supports drive voltages from 4.5V to 10V with a maximum Vgs tolerance of ±20V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)770mW (Ta)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1683 pF @ 15 V

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