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NTMFS4C13NT3G

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NTMFS4C13NT3G

MOSFET N-CH 30V 7.2A/38A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4C13NT3G is a 30V N-Channel Power MOSFET designed for efficient power management. This component offers a continuous drain current of 7.2A at 25°C ambient and 38A at 25°C case temperature, with a maximum power dissipation of 750mW at 25°C ambient. Key electrical parameters include a maximum Rds(on) of 9.1mOhm at 30A and 10V Vgs, and a gate charge (Qg) of 15.2 nC at 10V. Input capacitance (Ciss) is a maximum of 770 pF at 15V. The device operates across a temperature range of -55°C to 150°C. It is supplied in a 5-DFN (5x6) package, specifically an 8-PowerTDFN, 5-lead configuration, for surface mounting. This MOSFET is commonly utilized in automotive and industrial applications requiring robust power switching capabilities.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.2A (Ta), 38A (Tc)
Rds On (Max) @ Id, Vgs9.1mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs15.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 15 V

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