NTMFS4C13NBT1G
NTMFS4C13N - MOSFET SO8FL 30V 38Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C13NBT1G is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vds) of 30V and offers continuous drain current capabilities of 7.2A at typical ambient conditions and 38A under pulsed conditions at 25°C case temperature. With a low on-resistance (Rds(on)) of 9.1mOhm maximum at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET utilizes a 5-DFN (5x6) (8-SOFL) package, providing excellent thermal performance with a maximum power dissipation of 21.6W at 25°C case temperature. Key parameters include a gate charge (Qg) of 15.2 nC maximum and input capacitance (Ciss) of 770 pF maximum. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta), 21.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
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