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NTMFS4C10NT3G

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NTMFS4C10NT3G

MOSFET N-CHANNEL 30V 46A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4C10NT3G is an N-Channel MOSFET designed for demanding applications. This component features a 30V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 46A at 25°C (Tc). With a maximum Rds On of 6.95mOhm at 30A and 10V, it offers efficient switching performance. The device utilizes Metal Oxide technology and is presented in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 leads, suitable for surface mounting. Key electrical characteristics include a gate charge of 9.7 nC at 4.5V and an input capacitance of 987 pF at 15V. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 750mW (Ta). This MOSFET is commonly employed in power management solutions, automotive systems, and industrial control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Rds On (Max) @ Id, Vgs6.95mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)750mW (Ta)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds987 pF @ 15 V

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