NTMFS4C10NT1G
MOSFET N-CH 30V 8.2A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C10NT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a drain-source breakdown voltage of 30 V and a continuous drain current capability of 8.2 A at 25°C ambient temperature, with a maximum power dissipation of 750 mW (Ta) and 23.6 W (Tc). The device exhibits a low on-resistance of 6.95 mOhm at 30 A and 10 V gate drive. Key electrical characteristics include a gate charge (Qg) of 9.7 nC at 4.5 V and input capacitance (Ciss) of 987 pF at 15 V. The MOSFET operates with a gate-source voltage range of up to ±20 V and a threshold voltage (Vgs(th)) of 2.2 V at 250 µA. Packaged in an 8-PowerTDFN, 5-lead (5x6) surface mount configuration, the NTMFS4C10NT1G is supplied on tape and reel. This component is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.95mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta), 23.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V |
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