NTMFS4C10NBT1G
MOSFET N-CH 30V 16.4A/46A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C10NBT1G is a 30V N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a low Rds(on) of 6.95mOhm at 30A and 10V Vgs, facilitating minimal conduction losses. Continuous drain current is rated at 16.4A at ambient temperature and 46A at case temperature, with maximum power dissipation of 2.51W (Ta) and 23.6W (Tc). The device is housed in a compact 5x6mm 5-DFN (8-SOFL) package, suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 18.6 nC and input capacitance (Ciss) of 987 pF at specified conditions. Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.95mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.51W (Ta), 23.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V |
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