NTMFS4C09NT3G
MOSFET N-CH 30V 9A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C09NT3G is an N-Channel Power MOSFET designed for efficient power management applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C ambient temperature. With a low on-resistance (Rds On) of 5.8mOhm at 30A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The device is housed in a compact 5-DFN (5x6) package, offering a robust power dissipation capability of 760mW ambient and 25.5W case temperature. Key electrical characteristics include a maximum gate charge Qg of 10.9 nC at 4.5V Vgs and an input capacitance Ciss of 1252 pF at 15V Vds. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial, and consumer electronics power conversion circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta), 25.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1252 pF @ 15 V |
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