NTMFS4C09NBT1G
MOSFET N-CH 30V SO8FLManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C09NBT1G is an N-Channel Power MOSFET designed for efficient power management applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 9A at 25°C ambient, scaling up to 52A under thermal management at the case. With a low on-resistance (Rds On) of 5.8 mOhm at 30A and 10Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V, with a typical gate charge (Qg) of 10.9 nC at 4.5V. Input capacitance (Ciss) is 1252 pF at 15Vds. The MOSFET offers a maximum power dissipation of 760mW at ambient and 25.5W at the case. It is housed in an 8-PowerTDFN, 5-lead package (5-DFN (5x6) (8-SOFL)) for surface mounting. Operating temperature range is -55°C to 150°C. This component is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta), 25.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1252 pF @ 15 V |
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