NTMFS4C09NAT1G
MOSFET N-CH 30V 9A/52A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C09NAT1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 30V Drain-Source Voltage (Vdss) and offers a continuous drain current rating of 9A at ambient temperature and 52A at case temperature. With a low on-resistance of 5.8mOhm at 30A and 10V, this MOSFET minimizes conduction losses. The NTMFS4C09NAT1G is packaged in an 8-PowerTDFN, 5-lead (5x6) (8-SOFL) footprint for surface mounting, utilizing advanced MOSFET technology. Key parameters include a gate charge (Qg) of 1.9 nC at 4.5V and an input capacitance (Ciss) of 1252 pF at 15V. It operates across a temperature range of -55°C to 150°C. This device is suitable for applications in power management, automotive, and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1252 pF @ 15 V |
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