NTMFS4C08NT1G-001
MOSFET N-CH 30V 9A/52A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4C08NT1G-001 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current of 9A (ambient) or 52A (case) at 25°C. The low on-resistance of 5.8mOhm is achieved at 18A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. With a maximum gate charge of 18.2 nC at 10V and input capacitance of 1670 pF at 15V, it is suitable for efficient switching. The NTMFS4C08NT1G-001 is housed in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, for surface mounting. Its maximum power dissipation is rated at 760mW (ambient). This MOSFET is utilized across industries such as automotive and industrial power management. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 15 V |
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