NTMFS4C08NAT1G
MOSFET N-CH 30V 16.4A/52A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4C08NAT1G is an N-Channel Power MOSFET in a 8-PowerTDFN, 5 Leads (5x6) package. This device features a 30 V Drain-to-Source Voltage (Vdss) and offers a continuous drain current of 16.4 A at 25°C (ambient) and 52 A at 25°C (case). The maximum power dissipation is 2.51 W (ambient) and 25.5 W (case). With a low on-resistance of 5.8 mOhm at 18 A and 10 V gate drive, it supports gate drive voltages from 4.5 V to 10 V. Key electrical characteristics include a maximum gate charge (Qg) of 18.2 nC at 10 V and a maximum input capacitance (Ciss) of 1670 pF at 15 V. The operating temperature range is -55°C to 175°C (junction). This MOSFET is suitable for applications in automotive and industrial power management. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.51W (Ta), 25.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 15 V |
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