NTMFS4C06NT1G
MOSFET N-CH 30V 11A/69A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C06NT1G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 30V and offers a continuous drain current capability of 11A at a typical ambient temperature and 69A at a case temperature. The device exhibits low on-resistance (Rds(on)) of 4mOhm at 30A and 10V Vgs, with a maximum gate-source voltage (Vgs) of ±20V. Key characteristics include a maximum gate charge (Qg) of 26 nC and input capacitance (Ciss) of 1683 pF. The NTMFS4C06NT1G is housed in a 5-DFN (5x6) package, also known as 8-PowerTDFN, 5 leads, suitable for surface mounting. With a maximum power dissipation of 770mW (Ta) and 30.5W (Tc), this MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 770mW (Ta), 30.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1683 pF @ 15 V |
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