NTMFS4C05NT1G-001
MOSFET N-CH 30V 11.9A/78A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C05NT1G-001 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30 V drain-source voltage and offers a continuous drain current of 11.9 A at 25°C ambient and 78 A at 25°C case temperature. With a maximum on-resistance of 3.4 mOhm at 30 A and 10 V Vgs, it minimizes conduction losses. The gate charge is specified at 14 nC maximum at 4.5 V Vgs, facilitating fast switching speeds. Input capacitance (Ciss) is 1972 pF maximum at 15 V Vds. The MOSFET is housed in a compact 5-DFN (5x6) package, also known as 8-PowerTDFN, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C. This component is commonly utilized in automotive, industrial, and computing power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.9A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 770mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V |
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