NTMFS4C05NAT1G
MOSFET N-CH 30V 21.7A/78A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C05NAT1G is an N-Channel Power MOSFET designed for high-density power applications. This device features a 30V drain-source breakdown voltage and offers continuous drain current capabilities of 21.7A at 25°C ambient and 78A at 25°C case temperature. With a low on-resistance of 3.4mOhm maximum at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET is packaged in an 8-PowerTDFN, 5-lead (5x6) (8-SOFL) surface mount configuration, suitable for demanding thermal environments with a maximum power dissipation of 2.57W (Ta) and 33W (Tc). Key electrical parameters include a gate charge of 30 nC maximum and input capacitance of 1972 pF maximum. It is engineered for operation across a temperature range of -55°C to 150°C. This component finds utility in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.7A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.57W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V |
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