NTMFS4C032NT1G
MOSFET N-CH 30V 13A/38A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4C032NT1G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30 V Drain-Source Voltage (Vdss) and offers a continuous drain current of 13 A at a 25°C ambient temperature (Ta) and 38 A at a 25°C case temperature (Tc). The maximum power dissipation is 2.46 W (Ta) and 21.6 W (Tc). With a low on-resistance (Rds On) of 7.35 mOhm at 30 A and 10 V Vgs, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. Key parameters include a maximum gate charge (Qg) of 15.2 nC at 10 V and input capacitance (Ciss) of 770 pF at 15 V Vds. The NTMFS4C032NT1G is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) and is supplied on tape and reel. This component is commonly found in power management solutions, automotive applications, and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.35mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.46W (Ta), 21.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
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