NTMFS4C029NT3G
MOSFET N-CH 30V 15A/46A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C029NT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 15A at ambient temperature and 46A at case temperature. With a low on-resistance of 5.88mOhm maximum at 30A and 10V drive, it offers efficient power handling. The MOSFET is available in a compact 5-DFN (5x6) (8-SOFL) package suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 18.6 nC maximum and input capacitance (Ciss) of 987 pF maximum. Power dissipation is rated at 2.49W (Ta) and 23.6W (Tc). This device is commonly utilized in power management, automotive, and industrial automation systems. It operates across a wide temperature range from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.88mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.49W (Ta), 23.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V |
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