NTMFS4C029NAT1G
MOSFET N-CH 30V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C029NAT1G is an N-Channel MOSFET designed for demanding applications. This device features a 30V drain-source voltage rating and offers a continuous drain current capability of 8.2A at ambient temperature and 46A at case temperature. With a low on-resistance of 5.88mOhm at 30A and 10V Vgs, it optimizes power efficiency. The MOSFET is packaged in an 8-PowerTDFN, 5-lead (5x6) configuration suitable for surface mount assembly and supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 18.6 nC at 10V and input capacitance (Ciss) of 987 pF at 15V. It operates across a temperature range of -55°C to 150°C. This component finds application in power management solutions and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.88mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 750mW (Ta), 23.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 987 pF @ 15 V |
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