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NTMFS4C028NT3G

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NTMFS4C028NT3G

MOSFET N-CH 30V 16.4A/52A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4C028NT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current capability of 16.4A at 25°C ambient (Ta) and 52A at 25°C case temperature (Tc). Its low on-resistance is specified at a maximum of 4.73mOhm at 30A and 10V gate-source voltage (Vgs). The device offers a power dissipation of 2.51W (Ta) and 25.5W (Tc), with an operating temperature range of -55°C to 150°C. The NTMFS4C028NT3G utilizes advanced MOSFET technology and is housed in a compact 5-DFN (5x6) (8-SOFL) package, suitable for surface mount applications. Key electrical characteristics include a maximum gate charge (Qg) of 22.2 nC at 10V Vgs and a maximum input capacitance (Ciss) of 1252 pF at 15V Vds. It supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. This MOSFET is commonly employed in automotive, industrial power, and consumer electronics sectors. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16.4A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs4.73mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)2.51W (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id2.1V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1252 pF @ 15 V

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