NTMFS4C027NT1G
MOSFET N-CH 30V 16.4A/52A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTMFS4C027NT1G is a 30V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low Rds(on) of 4.8mOhm at 18A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current capability of 16.4A at ambient temperature and 52A at case temperature, it is suitable for demanding thermal environments. The MOSFET offers a maximum power dissipation of 2.51W (Ta) and 25.5W (Tc). It operates within a temperature range of -55°C to 150°C (TJ) and utilizes a 5-DFN (5x6) 8-SOFL package for efficient thermal management. Key electrical parameters include a gate charge (Qg) of 18.2 nC (max) at 10V Vgs and input capacitance (Ciss) of 1670 pF (max) at 15V Vds. This component is commonly employed in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.51W (Ta), 25.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 15 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
