NTMFS4C027NAT1G
NTMFS4C02 - Trench 6 30V NCHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C027NAT1G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 30V Drain-Source Voltage (Vdss) and supports continuous drain currents of 9A at ambient temperature and 52A at case temperature. With a low Rds(on) of 4.8mOhm at 18A and 10V Vgs, it minimizes conduction losses. The MOSFET exhibits a maximum gate charge of 18.2 nC at 10V Vgs and an input capacitance of 1670 pF at 15V Vds. It is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Power dissipation is rated at 760mW (Ta) and 25.5W (Tc). This component is utilized in industries such as automotive and industrial power management. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta), 25.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 15 V |
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