NTMFS4C025NT3G
MOSFET N-CH 30V 20A/69A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C025NT3G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 20A at ambient temperature and 69A at case temperature. The low on-resistance of 3.41mOhm is achieved at 30A and 10V gate drive, with a maximum gate drive voltage of 4.5V and a typical gate charge of 26 nC. The MOSFET exhibits a maximum input capacitance (Ciss) of 1683 pF at 15V drain-source voltage.
The NTMFS4C025NT3G is packaged in an 8-PowerTDFN, 5-lead (5x6) 5-DFN (8-SOFL) configuration, suitable for surface mounting. It supports a maximum power dissipation of 2.55W (Ta) and 30.5W (Tc) and operates across a temperature range of -55°C to 150°C. This component is widely utilized in automotive power management, industrial power supplies, and high-efficiency power conversion systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.41mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.55W (Ta), 30.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1683 pF @ 15 V |
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