NTMFS4C024NT3G
MOSFET N-CH 30V 21.7A/78A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C024NT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and offers high continuous drain current capabilities of 21.7A at ambient temperature and 78A at case temperature. With a low on-resistance (Rds On) of 2.8mOhm at 30A and 10V, it minimizes conduction losses. The device is packaged in an 8-PowerTDFN, 5-lead (5x6) footprint for efficient thermal management, supporting power dissipation of 2.57W (Ta) and 33W (Tc). Key electrical parameters include a gate charge (Qg) of 30nC at 10V and input capacitance (Ciss) of 1972pF at 15V. The NTMFS4C024NT3G is suitable for use in automotive, industrial, and power supply applications requiring robust switching performance. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.7A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.57W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1972 pF @ 15 V |
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