NTMFS4C020NT3G
MOSFET N-CH 30V 47A/303A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C020NT3G is an N-Channel MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 47A at 25°C ambient and 303A at 25°C case temperature. With a maximum power dissipation of 3.2W (Ta) and 134W (Tc), it offers robust thermal performance. The Rds(On) is specified at a maximum of 0.7 mOhm at 30A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 139 nC (max) and input capacitance (Ciss) of 10144 pF (max). This MOSFET is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) and is supplied on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ). The NTMFS4C020NT3G is suitable for use in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Ta), 303A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 134W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10144 pF @ 15 V |
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