NTMFS4C01NT1G
MOSFET N-CH 30V 47A/303A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4C01NT1G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and supports continuous drain currents of 47A at 25°C ambient and 303A at 25°C case temperature. Exhibiting a low on-resistance (Rds(on)) of 0.9mOhm maximum at 30A and 10V Vgs, it offers minimal conduction losses. The device can be driven with gate voltages from 4.5V to 10V. With a maximum power dissipation of 3.2W (ambient) and 134W (case), it is suitable for demanding thermal environments. Key electrical characteristics include a maximum gate charge (Qg) of 139 nC at 10V and input capacitance (Ciss) of 10144 pF at 15V. The NTMFS4C01NT1G is housed in a 5-DFN (5x6) (8-SOFL) package, designed for surface mounting. This component is commonly utilized in automotive, industrial, and power supply sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Ta), 303A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 134W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10144 pF @ 15 V |
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