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NTMFS4985NFT3G

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NTMFS4985NFT3G

MOSFET N-CH 30V 17.5A/65A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4985NFT3G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 30 V and supports continuous drain current (Id) ratings of 17.5 A at ambient temperature and 65 A at case temperature. With a maximum on-resistance (Rds On) of 3.4 mOhm at 30 A and 10 Vgs, it offers low conduction losses. The device is housed in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, and is supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 30.5 nC at 10 V and input capacitance (Ciss) of 2100 pF at 15 Vds. It operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17.5A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs3.4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)1.63W (Ta), 22.73W (Tc)
Vgs(th) (Max) @ Id2.3V @ 1mA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 15 V

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