NTMFS4985NFT1G
MOSFET N-CH 30V 17.5A/65A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4985NFT1G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 17.5A at 25°C ambient temperature, scaling to 65A under pulsed or controlled thermal conditions. With a low on-resistance (Rds On) of 3.4mOhm at 30A and 10V gate-source voltage (Vgs), it minimizes conduction losses. The MOSFET supports a wide drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 30.5 nC at 10V Vgs. Its input capacitance (Ciss) is 2100 pF at 15V drain-source voltage. The NTMFS4985NFT1G is packaged in a 5-DFN (5x6) (8-SOFL) surface mount configuration, enabling high power density and efficient heat dissipation with a maximum power dissipation of 1.63W (Ta) and 22.73W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.63W (Ta), 22.73W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 15 V |
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