NTMFS4983NFT3G
MOSFET N-CH 30V 22A/106A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4983NFT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous drain current capability of 22A at ambient temperature (Ta) and 106A at case temperature (Tc). Its low on-resistance is specified at a maximum of 2.1mOhm at 30A and 10V gate-source voltage. The device supports a wide range of drive voltages, from 4.5V to 10V, and has a gate charge (Qg) of 47.9 nC at 10V. Input capacitance (Ciss) is a maximum of 3250 pF at 15V. With a maximum power dissipation of 1.7W (Ta) and 38W (Tc), this MOSFET is rated for operation between -55°C and 150°C. The NTMFS4983NFT3G is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting, and is delivered on tape and reel. This component is widely utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 15 V |
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