NTMFS4983NFT1G
MOSFET N-CH 30V 22A/106A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4983NFT1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous Drain Current (Id) of 22A at 25°C ambient temperature and 106A at 25°C case temperature. With a maximum On-Resistance (Rds On) of 2.1 mOhm at 30A and 10V Vgs, it ensures minimal power loss. The device is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 47.9 nC at 10V Vgs and an input capacitance (Ciss) of 3250 pF at 15V Vds. This MOSFET is engineered for operation across a wide temperature range from -55°C to 150°C. Its performance profile makes it suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 47.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 15 V |
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