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NTMFS4982NFT3G

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NTMFS4982NFT3G

MOSFET N-CH 30V 26.5A/207A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4982NFT3G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 30 V and offers a continuous drain current capability of 26.5 A at 25°C ambient temperature, scaling to 207 A under pulsed or pulsed conditions. The Rds(On) is specified at a maximum of 1.3 mOhm at 25 A and 10 Vgs. With a gate charge (Qg) of 84 nC (max) at 10 Vgs and input capacitance (Ciss) of 6000 pF (max) at 15 Vds, this MOSFET facilitates high-speed switching. The NTMFS4982NFT3G is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting, and operates within an extended temperature range of -55°C to 150°C. This component is utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs1.3mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id2.2V @ 1mA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 15 V

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