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NTMFS4982NFT1G

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NTMFS4982NFT1G

MOSFET N-CH 30V 26.5A/207A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4982NFT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 26.5A at 25°C ambient or 207A at 25°C case temperature. It exhibits a low on-resistance of 1.3mOhm maximum at 25A and 10V Vgs. The device is supplied in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, with a Tape & Reel (TR) packaging format. Key specifications include a maximum gate charge of 84 nC at 10V Vgs and an input capacitance of 6000 pF maximum at 15V Vds. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive, industrial, and consumer electronics requiring robust power switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26.5A (Ta), 207A (Tc)
Rds On (Max) @ Id, Vgs1.3mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id2.2V @ 1mA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 15 V

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