NTMFS4955NT1G
MOSFET N-CH 30V 9.7A/48A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4955NT1G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. Featuring a 30V drain-source breakdown voltage, this device offers a continuous drain current capability of 9.7A at ambient temperature and up to 48A at case temperature. Its low on-resistance of 6mOhm at 30A and 10V drive voltage, coupled with a maximum gate charge of 10.8 nC at 4.5V, ensures minimal conduction and switching losses.
The MOSFET is housed in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN, with 5 leads, suitable for surface mounting. It supports a wide operating temperature range from -55°C to 150°C. The maximum power dissipation is 920mW at ambient and 23.2W at case temperature. This component is commonly utilized in automotive systems, power supplies, and various industrial control applications where robust power management is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta), 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 23.2W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1264 pF @ 15 V |