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NTMFS4946NT1G

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NTMFS4946NT1G

MOSFET N-CH 30V 12.7A/100A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi NTMFS4946NT1G is an N-Channel, 30V MOSFET designed for efficient power switching applications. This component features a low on-resistance of 3.4 mOhm at 30A and 10V. It supports continuous drain currents of 12.7A at ambient temperature (Ta) and 100A at case temperature (Tc), with corresponding power dissipation ratings of 890mW (Ta) and 55.5W (Tc). The device is housed in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, suitable for surface mounting. Key electrical characteristics include a gate charge Qg of 53 nC at 11.5V and input capacitance Ciss of 3250 pF at 12V. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs3.4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)890mW (Ta), 55.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds3250 pF @ 12 V

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