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NTMFS4945NT3G

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NTMFS4945NT3G

MOSFET N-CH 30V 7.4A/35A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4945NT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and offers a continuous drain current of 7.4 A under typical ambient conditions and 35 A when referenced to case temperature. The device exhibits a low on-resistance of 9 mOhm at 30 A and 10 V gate drive. With a maximum power dissipation of 910 mW (Ta) and 19.8 W (Tc), it is suitable for thermal management in compact designs. Key electrical parameters include a Gate Charge (Qg) of 17.6 nC (Max) at 10 V and Input Capacitance (Ciss) of 1205 pF (Max) at 15 V. The NTMFS4945NT3G is housed in a 5-DFN (5x6) (8-SOFL) package, facilitating surface mounting. Its operating temperature range is -55°C to 150°C. This MOSFET is utilized in various industries including automotive and industrial power management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.4A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)910mW (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1205 pF @ 15 V

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