NTMFS4945NT1G
MOSFET N-CH 30V 7.4A/35A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4945NT1G is a 30 V N-Channel Power MOSFET designed for efficient power management applications. This component features a low Rds(on) of 9 mOhm maximum at 30 A and 10 V Vgs, minimizing conduction losses. It offers continuous drain current capabilities of 7.4 A at ambient temperature and 35 A at case temperature, with a maximum power dissipation of 910 mW (ambient) and 19.8 W (case). The NTMFS4945NT1G utilizes advanced MOSFET technology and comes in an 8-PowerTDFN, 5-lead package (5x6mm), suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 17.6 nC maximum at 10 V Vgs and input capacitance (Ciss) of 1205 pF maximum at 15 V Vds. This device is engineered for use in industries such as automotive and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 910mW (Ta), 19.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1205 pF @ 15 V |
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