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NTMFS4943NT3G

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NTMFS4943NT3G

MOSFET N-CH 30V 8.3A/41A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4943NT3G is a 30 V N-Channel Power MOSFET designed for demanding power management applications. This device offers a continuous drain current capability of 8.3 A at 25°C ambient temperature and up to 41 A when measured at the case. Its low on-resistance of 7.2 mOhm at 30 A and 10 V gate drive minimizes conduction losses, while its maximum power dissipation of 910 mW (Ta) and 22.3 W (Tc) supports efficient thermal management. The NTMFS4943NT3G features a gate charge (Qg) of 20.9 nC at 10 V and an input capacitance (Ciss) of 1401 pF at 15 V. Packaged in an 8-PowerTDFN, 5-Lead (5x6) 5-DFN (8-SOFL) configuration, this MOSFET is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Its robust specifications make it a viable component for automotive, industrial, and consumer electronics power systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.3A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs7.2mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)910mW (Ta), 22.3W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1401 pF @ 15 V

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