NTMFS4943NT1G
MOSFET N-CH 30V 8.3A/41A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4943NT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source voltage rating and offers a continuous drain current capability of 8.3A at a typical ambient temperature (Ta) or 41A at a case temperature (Tc). The low on-resistance of 7.2mOhm at 30A and 10V gate drive ensures minimal conduction losses. With a maximum power dissipation of 910mW (Ta) and 22.3W (Tc), it is suitable for demanding thermal environments. The MOSFET is housed in an 8-PowerTDFN, 5-lead package, commonly referred to as 5-DFN (5x6) (8-SOFL), designed for surface mounting and optimized for thermal performance. Key parameters include a gate charge (Qg) of 20.9 nC and input capacitance (Ciss) of 1401 pF, critical for switching performance. This component finds application in automotive, industrial power supplies, and consumer electronics where efficient power conversion is paramount. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta), 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 910mW (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1401 pF @ 15 V |
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