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NTMFS4939NT3G

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NTMFS4939NT3G

MOSFET N-CH 30V 9.3A/53A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4939NT3G is an N-channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and offers continuous drain current capabilities of 9.3A at ambient temperature and 53A at case temperature. With a low on-resistance of 5.5mOhm at 30A and 10V, it ensures efficient power transfer. Key specifications include a gate charge of 28.5 nC at 10V and input capacitance of 1954 pF at 15V. The NTMFS4939NT3G is housed in an 8-PowerTDFN, 5-lead package (5x6mm DFN), suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C. This component is frequently utilized in power management, automotive, and industrial control systems. The device is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9.3A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs5.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)920mW (Ta), 30W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs28.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1954 pF @ 15 V

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