NTMFS4939NT1G
MOSFET N-CH 30V 9.3A/53A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTMFS4939NT1G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 30 V drain-to-source voltage (Vdss) and offers a continuous drain current (Id) of 9.3 A at 25°C ambient temperature and 53 A at 25°C case temperature. The device exhibits a low on-resistance of 5.5 mOhm maximum at 30 A and 10 V gate-source voltage (Vgs). It supports gate drive voltages from 4.5 V to 10 V. The NTMFS4939NT1G has a maximum power dissipation of 920 mW (Ta) and 30 W (Tc). Key parameters include a gate charge (Qg) of 28.5 nC at 10 V and an input capacitance (Ciss) of 1954 pF maximum at 15 V. The component is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power conversion systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta), 53A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1954 pF @ 15 V |
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