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NTMFS4937NT3G

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NTMFS4937NT3G

MOSFET N-CH 30V 10.2A/70A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTMFS4937NT3G is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source voltage and supports continuous drain currents of 10.2A at ambient temperature and 70A at case temperature. With a low on-resistance of 4mOhm at 30A and 10V Vgs, it offers excellent conduction efficiency. The MOSFET is housed in a 5-DFN (5x6) (8-SOFL) surface mount package, enabling efficient thermal management with power dissipation ratings of 920mW (Ta) and 43W (Tc). Key electrical characteristics include a gate charge of 31 nC at 10V Vgs and input capacitance of 2516 pF at 15V Vds. The operating temperature range is -55°C to 150°C. This component is suitable for use in power management, automotive systems, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.2A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)920mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2516 pF @ 15 V

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