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NTMFS4937NCT1G

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NTMFS4937NCT1G

MOSFET N-CH 30V 10.2A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4937NCT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 10.2 A at 25°C (Ta). The extremely low on-resistance of 4 mOhm at 30 A and 10 V gate drive makes it highly efficient for power conversion and switching tasks. Key parameters include a Gate Charge (Qg) of 31 nC (max) at 10 V and an Input Capacitance (Ciss) of 2516 pF (max) at 15 V. The device utilizes a 5-DFN (5x6) package, specifically the 8-PowerTDFN, 5 Leads variant, suitable for surface mounting. The NTMFS4937NCT1G is commonly found in industrial power supplies, automotive electronics, and consumer electronics where efficient power management is critical. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.2A (Ta)
Rds On (Max) @ Id, Vgs4mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2516 pF @ 15 V

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