NTMFS4936NT1G
MOSFET N-CH 30V 11.6A/79A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4936NT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source breakdown voltage (Vdss) and supports continuous drain currents of 11.6A at ambient temperature (Ta) and 79A at case temperature (Tc). With a low on-resistance (Rds On) of 3.8mOhm at 30A and 10V drive, it minimizes conduction losses. The device offers a maximum power dissipation of 920mW (Ta) and 43W (Tc).
Key parameters include a gate charge (Qg) of 43nC (max) at 10V and input capacitance (Ciss) of 3044pF (max) at 15V. The gate-source voltage (Vgs) tolerance is ±20V, with a threshold voltage (Vgs(th)) of 2.2V (max) at 250µA. The NTMFS4936NT1G is housed in an 8-PowerTDFN, 5-lead package (5x6) and is supplied on tape and reel. It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET finds utility in power management solutions, automotive electronics, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta), 79A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 920mW (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3044 pF @ 15 V |
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