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NTMFS4935NT3G

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NTMFS4935NT3G

MOSFET N-CH 30V 13A/93A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTMFS4935NT3G is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 13A at a 25°C ambient temperature and 93A at 25°C case temperature. With a low on-resistance of 3.2mOhm maximum at 30A and 10V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 930mW (Ta) and 48W (Tc). It is supplied in a 5-DFN (5x6) package with a 5-lead configuration, suitable for surface mounting. Key electrical characteristics include a gate charge of 49.4 nC maximum at 10V Vgs and an input capacitance of 4850 pF maximum at 15V Vds. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in various industries including automotive, industrial, and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)930mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4850 pF @ 15 V

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