NTMFS4935NT1G-IRH1
NTMFS4935NT1G-IRH1Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4935NT1G-IRH1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 30 V Drain-to-Source Voltage (Vdss) and offers a continuous drain current capability of 13A at ambient temperature (Ta) and 93A at case temperature (Tc). With a maximum on-resistance (Rds(on)) of 3.2 mOhm at 30A and 10V, it ensures efficient power transfer. The NTMFS4935NT1G-IRH1 is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) for surface mounting. Key electrical parameters include a gate charge (Qg) of 49.4 nC at 10V and input capacitance (Ciss) of 4850 pF at 15V. Power dissipation is rated at 930mW (Ta) and 48W (Tc). This MOSFET is suitable for use in power management, automotive, and industrial sectors. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 49.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 15 V |