NTMFS4935NBT1G
MOSFET N-CH 30V 13A/93A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTMFS4935NBT1G is an N-Channel Power MOSFET designed for demanding applications. This device offers a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 13A under typical ambient conditions (Ta) and up to 93A when measured at the case (Tc). Its low on-resistance (Rds On) of 3.2mOhm at 30A and 10V gate-source voltage (Vgs) ensures efficient power transfer. The MOSFET features a maximum gate charge (Qg) of 49.4 nC at 10V Vgs and an input capacitance (Ciss) of 4850 pF at 15V Vds.
With a power dissipation capability of 930mW (Ta) and 48W (Tc), the NTMFS4935NBT1G is suitable for high-power switching applications. It operates across a wide temperature range of -55°C to 150°C. The component is housed in a compact 5-DFN (5x6) (8-SOFL) package, facilitating surface mounting. This MOSFET finds use in automotive, industrial power control, and consumer electronics where efficient power management is critical. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 930mW (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 49.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 15 V |